| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 710mA/0.71A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2Ω/Ohm @1A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.4V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES 60 Volt VDS RDS(on)=2Ω |
| 描述与应用 | SOT223 N沟道增强 模式垂直DMOS FET FEATURES 60 Volt VDS RDS(on)=2Ω |