| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −30V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~450 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -250mV/-0.25V |
| 耗散功率PcPoWer Dissipation | 310mW/0.31W |
| Description & Applications | ·PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. ·Especially suited for automatic insertion in thick- and thin-film circuits. ·These transistors are subdivided into three groups A, B and C according to their current gain. The type BC856 is available in groups A and B, however, the types BC857, BC858 and BC859 can be supplied in all three groups. ·The BC859 is a low noise type. ·As complementary types, the NPN transistors BC846 … BC849 are recommended. |
| 描述与应用 | ·PNP硅外延平面晶体管开关和AF放大器应用。 ·特别适合自动插入厚薄膜电路。 ·这些晶体管被分为三组，A，B和C根据其电流增益。不同BC856是可用的，在组A和B，然而，类型BC857，BC858和BC859可以提供在所有三个组。 ·BC859是一款低噪声类型。 ·互补类型的NPN晶体管BC846... BC849建议。 |