| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-EmitterVoltage(VCEO) | -30V |
| 集电极连续输出电流ICCollector Current(IC) | -1.2A |
| 截止频率fTTranstion Frequency(fT) | 220MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 20000 @ -5V,-0.1A |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -1V |
| 耗散功率PcPower Dissipation | 350mW/0.35W |
| Description & Applications | • PNP Darlington Transistor • Designed for applications requiring extremely high current gain at currents to 800 mA. • Discrete POWER & Signal Technologies |
| 描述与应用 | • PNP达林顿晶体管 • 为需要电流增益可达到800mA而设计 • 分立功率与信号技术 |