| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | −25mA |
| 截止频率fTTranstion Frequency(fT) | 5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | |
| 耗散功率PcPoWer Dissipation | 300mW/0.3W |
| Description & Applications | PNP Silicon RF TransistorDESCRIPTION PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR92 and BFR92A. |
| 描述与应用 | PNP硅射频晶体管 说明 PNP晶体管在一个塑料SOT23信封。 它的主要目的是利用射频宽带放大器，如天线放大器，雷达系统，示波器，频谱分析仪，晶体管具有低互调失真和高功率增益，由于其非常高的转换频率，还具有优良的宽带性能和低噪声高频率。 NPN补充BFR92 BFR92A。 |