| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | -2.5A |
| 截止频率fTTranstion Frequency(fT) | 180MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 150~230 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP SILICON POWER (SWITCHING) TRANSISTOR FEATURES * 2W POWER DISSIPATION * 6A Peak Pulse Current * Excellent HFE Characteristics up to 6Amps * Extremely Low Saturation Voltage * Extremely Low Equivalent On-resistance; |
| 描述与应用 | PNP硅POWER （开关）晶体管 特点 *2W功耗 *6A峰值脉冲电流 *优秀HFE特性 *极低的饱和电压 *极低的等效导通电阻; |