| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 220mA/0.22A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.5Ω/Ohm @220mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-1.5V |
| 耗散功率Pd Power Dissipation | 360mW/0.36W |
| Description & Applications | N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V RDS(ON) = 6.0Ω @ VGS = 4.5 V • High density cell design for extremely low RDS(ON) • Rugged and Reliable • Compact industry standard SOT-23 surface mount package |
| 描述与应用 | N沟道逻辑电平增强模式场效应晶体管 •高密度电池设计极低的RDS（ON） •坚固和可靠的 •紧凑型工业标准SOT-23表面贴装封装 |