| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 1.9A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 830mW/0.83W |
| Description & Applications | N-channel enhancement mode field-effect transistor Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: FEATURES SYMBOL QUICK REFERENCE DATA • Very low threshold voltage VDS = 20 V • Fast switching • Logic level compatible ID = 1.05 A • Subminiature surface mount package |
| 描述与应用 | N沟道增强型场效应晶体管 描述 N沟道增强型场效应晶体管在一个塑料包装用 的TrenchMOS™1技术。产品可用性： 特点符号快速参考数据 •非常低阈值电压VDS= 20 V •快速开关 •逻辑电平兼容ID=1.05 •超小型表面贴装封装 |