| 极性Polarization | 双向 Bidirectional |
| 反向关断电压/工作电压VRWMReverse Standoff Voltage | 13.6V |
| 反向击穿电压VBRBreakdown Voltage | 16V |
| 峰值脉冲耗散功率PPPMPeak Pulse Power Dissipation | 400W |
| 峰值脉冲电流IPPmPeak Forward Surge Current | 18.2A |
| 额定耗散功率PdPower dissipation | |
| Description & Applications | Features •Silicon Avalanche Diodes • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction • Low Inductance • Excellent clamping capability • Repetition Rate (duty cycle):0.01% • Fast response time: typically less than 1.0ps from 0 Volts to V(BR) for unidirectional types • Typical IR less than 1µA above 10V • High temperature soldering: 250˚C/10 seconds at terminals |
| 描述与应用 | 特性 •硅雪崩二极管 •符合RoHS标准 •对于表面安装的应用RoHS，以优化电路板空间 •薄型包装 •内置应变救灾 •玻璃钝化结 •低电感 •出色的钳位能力 •重复率（占空比）：0.01％ •快速响应时间：通常小于1.0PS从0伏特至 V（BR）单向类型 •典型的IR小于1μA大于10V •高温焊接：250˚C/10秒钟在终端 |