| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V/-80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V/-60V |
| 集电极连续输出电流IC Collector Current(IC) | 1A/-1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 250mV/-300mV |
| 耗散功率Pc Power Dissipation | 1700mW |
| Description & Applications | Features • DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS • Low Equivalent On Resistance - NPN RCE(sat)210mΩ at 1A - PNP RCE(sat)355mΩ at -1A • Low Saturation Voltage • hFEcharacterised up to 2A • IC=1A Continuous Collector Current • SOT23-6 package APPLICATIONS • MOSFET gate driver • Low Power Motor Drive • Low Power DC-DC Converters |
| 描述与应用 | 特点 •DUAL60V NPN/ PNP硅中等功率晶体管 •低等效电阻 - NPN RCE（SAT）在1A210mΩ - PNP RCE（SAT）355mΩ-1A •低饱和电压 •hFEcharacterised的高达2A •IC= 1A连续集电极电流 •SOT23-6封装 应用 •MOSFET栅极驱动器 •低功率马达驱动 •低功率DC-DC转换器 |