| 最大源漏极电压VdsDrain-Source Voltage | 15v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -15v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 10~24ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.9~-2v |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | •Field Effect Transistor Silicon N Channel Junction Type •Video Camera First-Stage Applications Features Small Crss. Ultralow noise figure. Ultrasmall-sized package permitting 2SK443-applied sets to be small-sized. |
| 描述与应用 | •场效应晶体管的硅N沟道结型 •摄像机第一阶段的应用 特点 小反向传输电容。 超低噪声系数。 超小尺寸封装，允许2SK443应用 设置为小型。 |