| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 25V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流ICCollector Current(IC) | 25mA |
| 截止频率fTTranstion Frequency(fT) | 1.3GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 20~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 350mW/0.35W |
| Description & Applications | NPN silicon High-Frequency transistor Designed primarily for use in high–gain, low–noise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount components. |
| 描述与应用 | NPN硅高频晶体管 主要设计用于在高增益，低噪声放大器，振荡器和混频器应用中使用。包装厚膜或薄膜电路，采用表面贴装元件。 |