| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流ICCollector Current(IC) | 35mA |
| 截止频率fTTranstion Frequency(fT) | 14GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 210mW/0.21W |
| Description & Applications | NPN Silicon RF Transistor Low voltage/ Low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure |
| 描述与应用 | NPN硅RF晶体管 低电压/低电流操作 对于低噪声放大器 对于振荡器高达3.5 GHz和功率输出>10 dBm的 低噪声系数 |