| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 13V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 4V |
| 集电极连续输出电流ICCollector Current(IC) | 90mA |
| 截止频率fTTranstion Frequency(fT) | 37GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 360mW/0.36W |
| Description & Applications | NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages • High maximum stable and available gain • 150 GHz fT-Silicon Germanium technology • Extremly small and flat leadless package,reduced height 0.32 mm max. • Pb-free (RoHS compliant) • Qualified according AEC Q101 |
| 描述与应用 | NPN硅锗射频晶体管 •高增益超低噪声RF晶体管 •高达10 GHz的范围广泛的无线应用提供出色的性能 •适用于WLAN和所有5-6 GHz应用 •高OIP3和P-1分贝的的驱动程序阶段 •最高稳定和可用增益 •150 GHz的FT-硅锗技术 的极端小而扁平无引线封装，高度降低0.32毫米最大。 •无铅（符合RoHS） •符合AEC Q101 |