| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10v |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1,7Ω/Ohm @200mA,2,7V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.53-0.9V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • ESD Protected Gate |
| 描述与应用 | 低导通电阻 •非常低的栅极阈值电压，0.9V最大。 •开关速度快 •低输入/输出漏 •超小型表面贴装封装 •铅免费设计/ RoHS合规（注2） •“绿色”设备（注4） •ESD保护门 |