| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~450 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200~600 mV |
| 耗散功率PcPower Dissipation | 310mW/0.31W |
| Description & Applications | NPN Epitaxial Silicon Transistor SWITCHING AND AMPLIFIER APPLICATIONS · Suitable for automatic insertion in thick and thin-film circuits · LOW NOISE: BC849, BC850 · Complement to BC856 ... BC860 |
| 描述与应用 | NPN外延硅晶体管 开关和放大器应用 ·适用于自动插入厚薄膜电路 ·低噪声：BC849，BC850 ·补充BC856... BC860 |