最大源漏极电压VdsDrain-Source Voltage |
55v |
栅源极击穿电压V(BR)GSGate-Source Voltage |
-55v |
漏极电流(Vgs=0V)IDSSDrain Current |
1~12ma |
关断电压Vgs(off)Gate-Source Cut-off Voltage |
-5v |
耗散功率PdPower Dissipation |
150mW/0.15W |
Description & Applications |
•Silicon N-Channel Junction FET •For low-frequency amplification For switching •Low noise-figure (NF) •High gate to drain voltage VGDO •Low noise-figure (NF) •High gate to drain voltage VGDO |
描述与应用 |
•硅N沟道结型场效应管 •对于低频放大切换 •低噪声系数(NF) •高栅漏电压VGDO •低噪声系数(NF) •高栅漏电压VGDO |