| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | -4A |
| 截止频率fTTranstion Frequency(fT) | 60MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 250 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -375mV/-0.375V |
| 耗散功率PcPoWer Dissipation | 550mW/0.55W |
| Description & Applications | 40 V low VCE(sat) PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • High efficiency leading to less heat generation. • NPN complement: PBSS4540X. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Medium power driver (e.g. relays, buzzers and motors). |
| 描述与应用 | 40伏的低VCE（sat）的PNP晶体管 特点 •低集电极 - 发射极饱和电压VCE监测 •高集电极电流能力：IC和ICM •高效率导致更少的热量发电。 •NPN补充：PBSS4540X。 应用 •供电线路开关电路 •电池管理应用 •DC / DC转换器应用 •闪光灯单元 •中等功率驱动器（如继电器，蜂鸣器和电机）。 |