| 最大源漏极电压Vds Drain-Source Voltage |
60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
20V |
| 最大漏极电流Id Drain Current |
300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
2Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
1-2.5V |
| 耗散功率Pd Power Dissipation |
350mW/0.35W |
| Description & Applications |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant ESD Protected Up To 2kV "Green" Device Qualified to AEC-Q101 Standards for High Reliability |
| 描述与应用 |
N沟道增强型场效应晶体管 特性 N沟道增强型场效应 晶体管 低导通电阻RDS（ON 低栅极阈值电压 低输入电容 开关速度快 低输入/输出漏 无铅设计/符合限制有害物质指令（RoHS）规范要求 ESD保护高达2kV “绿色”设备 符合AEC-Q101高可靠性标准 |