| Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-15V |
| Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-12V |
| Q1集电极连续输出电流IC Collector Current(IC) |
-500MA/-0.5A |
| Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| Q2集电极连续输出电流IC Collector Current(IC) |
100MA/0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) |
|
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
|
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
|
| Q2基极输入电阻R1 Input Resistance(R1) |
47KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 |
30~1000/80 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
130MHZ / 250MHZ |
| 耗散功率Pc Power Dissipation |
0.2W |
| Description & Applications |
TOSHIBA Multichip Discrete Device
• Power Management Switch Applications, Inverter
Circuit Applications, Driver Circuit Applications and
Interface Circuit Applications
• Combining transistor and BRT reduces the parts count, enabling the
design of more compact equipment with a simpler system configuration.
Q1: 2SA1955F equivalent
Q2: RN1104F equivalent
|
| 描述与应用 |
东芝多片分立器件
电源管理开关应用,逆变器
电路的应用程序,驱动电路和应用
接口电路的应用
结合晶体管和BRT减少了零件数量,使
设计更紧凑的设备与一个简单的系统配置。
Q1:2 sa1955f
Q2:RN1104F等效
|