| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 400mA/0.4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 700mΩ@ VGS = 10V, ID = 200mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1.1~1.8V |
| 耗散功率PdPower Dissipation | 300mW/0.3W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications • Small package • Low Drain-Source ON resistance. : Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 •小型封装 •低漏源导通电阻。 ：RON =0.7Ω（最大值）（@ VGS= 10 V） RON=1.2Ω（最大）（@ VGS=4 V） |