| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -2.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 85mΩ@ VGS = 4.0V, ID = 1.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4~1.0V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.8 V drive • Low ON-resistance: Ron = 145 mΩ (max) (@VGS = 1.8V) Ron = 101 mΩ (max) (@VGS = 2.5V) Ron = 85 mΩ (max) (@VGS = 4.0V |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 ○高速开关应用 ○电源管理开关应用 •1.8 V驱动器 •低导通电阻：RON=145MΩ（最大）（@ VGS=1.8V） RON=101MΩ（最大）（@ VGS= 2.5V） RON=85毫欧（最大值）（@ VGS=4.0V |