| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -160V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −150V |
| 集电极连续输出电流ICCollector Current(IC) | −600mA/- 0.6A |
| 截止频率fTTranstion Frequency(fT) | 100~300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~240 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 1W |
| Description & Applications | PNP SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (DZT5551) • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Lead Free By Design/RoHS Compliant |
| 描述与应用 | PNP表面贴装晶体管 特点 •外延平面模具建设 •互补NPN类型（DZT5551） •非常适合自动装配工艺 •非常适于中等功率开关或放大应用 •对无铅要求的设计/符合限制有害物质指令（RoHS）规范要求 |