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商品参数:

  • 型号:AO6602
  • 厂家:AOS
  • 批号:10+ROHS 10+ROHS
  • 整包数量:3000
  • 最小起批量:10
  • 标记/丝印/代码/打字:
  • 封装:SOT-163/SOT23-6/TSOP6
  • 技术文档:下载

最大源漏极电压VdsDrain-Source Voltage30V/-30V
最大栅源极电压Vgs(±)Gate-Source Voltage20V
最大漏极电流IdDrain Current3.1A/-2.7A
源漏极导通电阻RdsDrain-Source On-State Resistance88mΩ@ VGS = 4.5V,ID =2A
开启电压Vgs(th)Gate-Source Threshold Voltage1~3V
耗散功率PdPower Dissipation1.15W
Description & ApplicationsComplementary Enhancement Mode Field Effect Transistor General Description The AO6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6602 is Pb-free (meets ROHS & Sony 259 specifications). AO6602L is a Green Product ordering option. AO6602 and AO6602L are electrically identical.
描述与应用互补增强模式场效应晶体管 概述 AO6602采用先进沟道技术,提供优良的RDS(ON)和栅极电荷低。互补MOSFET形成一个高速的逆变电源,适合多种应用。标准产品AO6602是无铅(符合ROHS& 索尼259规格)。 AO6602L是一种绿色产品订购选项。 AO6602和AO6602L是电动相同。
规格书PDF 下载

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深圳市爱瑞凯电子科技有限公司
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AO6602
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