| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -12V |
| 集电极连续输出电流ICCollector Current(IC) | −300mA/-0.3A |
| 截止频率fTTranstion Frequency(fT) | 350MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~450 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= -0.15V Typ. @IC/IB=-100mA/-10mA) • Suitable for low voltage large current drivers • Excellent hFE Linearity • Complementary pair with DN030S • Switching Application |
| 描述与应用 | PNP硅晶体管 特点 •极低的集电极 - 发射极饱和电压（VCE（SAT）=-0.15V典型值@ IC/ IB=-100mA/-10mA） •适用于低电压大电流驱动器 •优秀的HFE线性 •DN030S互补配对 •开关应用 |