| 最大源漏极电压VdsDrain-Source Voltage | -8V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -8V |
| 最大漏极电流IdDrain Current | -630mA/-0.63A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1.2Ω@ VGS = -1.8V, ID = -200mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.45~-1V |
| 耗散功率PdPower Dissipation | 357mW/0.375W |
| Description & Applications | Dual P-Channel 1.8-V (G-S) MOSFET FEATURES • Trench FET Power MOSFET APPLICATIONS • Load Switch for Portable Devices |
| 描述与应用 | 双P沟道1.8-V（G-S）的MOSFET 特点 •沟槽FET功率MOSFET 应用 •用于便携式设备的负载开关 |