| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16V |
| 最大漏极电流Id Drain Current | 2.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.04Ω/Ohm @2.6A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | 30V N-Channel PowerTrench SyncFET™ General Description The FDN372S is designed to replace a single MOSFET and Schottky diode, used in synchronous DC-DC power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on)and ow gate harge. The FDN372S includes an integrated Schottky diode using Fairchild Semiconductor’s monolithic SyncFET process, making it ideal as the low side switch in a synchronous converter. • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) |
| 描述与应用 | 0V N沟道PowerTrench SyncFET™ 概述 FDN372S被设计来取代单个MOSFET和肖特基二极管，用于同步DC-DC电源，用一个单一的集成组件。 这30V MOSFET的设计最大限度地提高电源的转换效率，低RDS（ON）和低栅极电荷。 的FDN372S包括集成肖特基二极管采用飞兆半导体的单片 SyncFET过程中，使得它在同步转换器的低侧开关的理想选择。 •低栅极电荷 •开关速度快 •高性能沟道技术极 低RDS（ON） |