| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −250V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −250V |
| 集电极连续输出电流ICCollector Current(IC) | −50mA |
| 截止频率fTTranstion Frequency(fT) | 60MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −800mV/-0.8V |
| 耗散功率PcPoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP Silicon High-Voltage Transistor FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Telephony and professional communication equipment. |
| 描述与应用 | PNP硅高压晶体管 特点 •低电流（最大50毫安） •高电压（最大300 V）。 应用 •专业的电话和通信设备 |