| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流ICCollector Current(IC) | 2A |
| 截止频率fTTranstion Frequency(fT) | 150Mhz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~560 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | NPN Epitaxial Silicon Transistor Features • High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSB1121 |
| 描述与应用 | NPN外延硅晶体管 特点 •高电流驱动器应用 •低集电极 - 发射极饱和电压 •大电流容量和广泛的SOA •开关速度快 •KSB1121补 |