| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 120V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 120V |
| 集电极连续输出电流ICCollector Current(IC) | 500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 135~220 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200mV/0.2V |
| 耗散功率PcPower Dissipation | 1W |
| Description & Applications | Silicon NPN epitaxial planar type For low-frequency driver amplification ■ Features • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing |
| 描述与应用 | NPN硅外延平面型 低频驱动放大 ■特点 •高集电极 - 发射极电压（基本打开）VCEO •大集电极功耗PC •小型功率型封装，允许精简的设备， 通过自动插入带包装盒包装 |