最大源漏极电压Vds Drain-Source Voltage |
60V |
最大栅源极电压Vgs(±) Gate-Source Voltage |
20V |
最大漏极电流Id Drain Current |
115mA/0.115A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
7.5Ω/Ohm @500mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage |
1-2.5V |
耗散功率Pd Power Dissipation |
200mW/0.2W |
Description & Applications |
N-Channel 60-V (D-S) MOSFET Features N-Channel 60-V (D-S) MOSFET Low On-Resistance: 2.5 ohm Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage |
描述与应用 |
N沟道60-V(D-S)的MOSFET 特性 N沟道60-V(D-S)的MOSFET 低导通电阻2.5欧姆 低阈值:2.1 V 低输入电容:22 pF 开关速度快:7 NS 低输入和输出泄漏 |