| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -150V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −150V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 30MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FEATURES Low saturation voltage Excellent hFE COMPLEMENTARY TYPE FZT655 |
| 描述与应用 | PNP硅平面中等功率晶体管 特点 低饱和电压 优秀HFE 互补型FZT655 |