| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 20mA |
| 截止频率fTTranstion Frequency(fT) | 550MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 120~240 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | <300mV/0.3V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN SILICON TRANSISTOR Description • RF amplifier Features • High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] • Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] • Low base time constant and high gain • Excellent noise response |
| 描述与应用 | NPN硅晶体管 描述 •RF放大器 特点 •高电流转换频率 FT =550MHz的，VCE=6V，IE=1毫安] •低输出电容： COB=1.4pF[VCB =6V，IE = 0] 基数较低的时间常数和高增益 •优异的噪声响应 |