| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 2.5~7ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | |
| 耗散功率PdPower Dissipation | 250mW/0.25W |
| Description & Applications | •N-channel silicon field-effect transistors DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic the products are very suitable for applications such as the r.f. stages in f.m. portables (BF510), car radios (BF511) and mains radios (BF512) or the mixer stage (BF513). |
| 描述与应用 | •N沟道硅场效应晶体管 说明 非对称N沟道平面 外延结型场效应 微型塑料晶体管 的产品，非常适合 射频应用，如阶段 F.M.笔记本电脑（BF510），汽车收音机 （BF511）和电源收音机（BF512） 混频级（BF513）。 |