| 最大源漏极电压VdsDrain-Source Voltage | 55v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -55v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 1~12ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -5v |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | •Silicon N-Channel Junction FET •For low-frequency amplification For switching •Low noise-figure (NF) •High gate to drain voltage VGDO •Low noise-figure (NF) •High gate to drain voltage VGDO |
| 描述与应用 | •硅N沟道结型场效应管 •对于低频放大切换 •低噪声系数（NF） •高栅漏电压VGDO •低噪声系数（NF） •高栅漏电压VGDO |