| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 4.9A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 39mΩ@ VGS =4.5V, ID =6.6A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.6V |
| 耗散功率PdPower Dissipation | 1.3W |
| Description & Applications | Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • 100 % Rg Tested • Space Savings Optimized for Fast Switching • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Synchronous Rectification • Intermediate Driver |
| 描述与应用 | 双N沟道30-V（D-S）的MOSFET 特点 •无卤素根据IEC 61249-2-21定义 •100％的Rg测试 •节省空间优化快速切换 •符合RoHS指令2002/95/EC 应用 •同步整流 •中间驱动程序 |