| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.03Ω/Ohm @10mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.2V |
| 耗散功率Pd Power Dissipation | 100mW/0.1W |
| Description & Applications | Silicon MOSFETs (Small Signal) Silicon N-channel MOSFET For switching circuits Features N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING High-speed switching SSS Mini type package, allowing downsizing of the equipment and SSSMini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | 硅MOSFET（小信号） 硅N沟道MOSFET开关电路 特性 N沟道MOS FET高速开关 高速开关 SSS迷你型包装，允许缩编的设备和SSSMini型封装，允许精简的设备和通过自动插入磁带包装 |