反向电压Vr
Reverse Voltage(Vr) |
30V |
平均整流电流Io
Average Rectified Current(Io) |
0.15A |
最大正向压降VF
Forward Voltage(Vf) |
0.4V |
结电容值Cj
Junction capacitance(Cj) |
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耗散功率
Pd Power Dissipation |
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| Description & Applications |
| • Schottky Barrier Diodes (SBD) • Silicon epitaxial planar type • For super-high speed switching circuit • For wave detection circuit • Sealed in the S-mini (2-pin) mold and super small type • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Extremely low reverse current IR • Small temperature coefficient of forward characteristic |
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| 描述与应用 |
•肖特基势垒二极管（SBD） •硅外延平面型 •超高速开关电路 •波检测电路 •S-迷你（2脚）模具和超小型密封 •低正向上升电压（VF）和满意的波检测效率（η） •极低的反向电流IR •温度系数小的正向特性 |