| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −15V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 1.5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~120 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -100mV/-0.1V |
| 耗散功率PcPoWer Dissipation | 125mW/0.125W |
| Description & Applications | Silicon PNP epitaxial planar type Features • High speed switching • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | PNP硅外延平面型 特点 •高速开关 •低集电极 - 发射极饱和电压VCE（星期六） •SS-迷你型包装，让精简的设备和通过自动插入磁带包装 |