| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 900 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 200mV~500mV |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | NPN BISS transistor FEATURES • High current (max. 1 A) • Low collector-emitter saturation voltage ensures reduced power consumption. APPLICATIONS • Battery powered units where high current and low power consumption are important. DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. |
| 描述与应用 | NPN BISS晶体管 特点 •高电流（最大1 A） •低集电极 - 发射极饱和电压确保 降低功耗。 应用 •电池供电的设备，如高电流和低功耗 消耗是重要的。 说明 NPN突破性小信号（BISS）晶体管的 SOT23塑料包装。 |