| 最大源漏极电压VdsDrain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 115mA/0.115A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 2.53Ω@ VGS = 10V,ID = 0.5A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~2V |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant |
| 描述与应用 | N沟道增强型场效应晶体管 特点 •双N沟道MOSFET •低导通电阻 •低栅极阈值电压 •低输入电容 •开关速度快 •低输入/输出漏 •超小型表面贴装封装 •无铅/ RoHS标准 |