| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -100mA/-0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 3200mΩ@ VGS = -2.5V, ID = -1mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.1~-1.7V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型 高速开关应用 模拟开关应用 •小型封装 •低导通电阻 |