| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 5.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 19mΩ@ VGS = 4.5V, ID = 2.8A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.7~1.4V |
| 耗散功率PdPower Dissipation | 1.48W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV) -Portable Equipment Applications -Motor Drive Applications -DC/DC Converters • Lead (Pb)-free • Low drain-source ON-resistance: RDS(ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.) • Low leakage current: IDSS = 10 μA (max)(VDS = 30 V) • Enhancement model: Vth = 0.7 to 1.4V (VDS = 10 V, ID = 200 μA) |
| 描述与应用 | 东芝场效应晶体管硅N沟道MOS型（U-MOSIV） -便携式设备的应用 -电机驱动应用 -DC/DC转换器 •低漏源导通电阻RDS（ON）= 19mΩ（典型值） •高正向转移导纳：| YFS|=20 S（典型值） •低漏电流IDSS= 10μA（最大）（VDS=30 V） •增强型号：VTH=0.7〜1.4V （VDS=10V，ID=200μA） |