| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 10KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.213 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.15W/150mW |
| Description & Applications | Features •Transistor Silicon PNP Epitaxial Type (PCT Process) •Ultra-small package, suited to very high density mounting •Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. •A wide range of resistor values is available for use in various circuits. •Complementary to the RN1107MFV~RN1109MFV Applications •Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| 描述与应用 | 特点 •晶体管的硅PNP外延型（PCT工艺） •超小型封装，适合高密度安装 •结合到晶体管的偏置电阻器，减少了部件的数量，所以使越来越紧凑的设备的制造和降低装配成本。 •宽范围的电阻值是可用于在各种电路。 •互补的RN1107MFV〜RN1109MFV等 应用 •开关，逆变电路，接口电路和驱动器电路应用 |