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商品参数:

  • 型号:RN1103MFV
  • 厂家:TOSHIBA
  • 批号:12+ROHS
  • 整包数量:8000
  • 最小起批量:100
  • 标记/丝印/代码/打字:XC
  • 封装:SOT-723/VESM
  • 技术文档:下载

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)22KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)22KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)70
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsFeatures Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2103MFV
描述与应用特性 开关,逆变电路,接口电路和驱动器电路应用 适合非常高密度安装超小型封装, 结合到晶体管偏置电阻器减少部件的数量,所以能够制造比更紧凑设备并降低装配成本。 宽范围的电阻值是可用于在各种电路。 对管是RN2103MFV
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深圳市爱瑞凯电子科技有限公司
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RN1103MFV
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