| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
100V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
100V |
| 集电极连续输出电流ICCollector Current(IC) |
500mA/0.5A |
| 截止频率fTTranstion Frequency(fT) |
130MHz |
| 直流电流增益hFEDC Current Gain(hFE) |
90~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
500mV/0.5V |
| 耗散功率PcPower Dissipation |
500mW/0.5W |
| Description & Applications |
NPN Silicon epitaxial Transistors for high voltage drive applications Complementary to 2SA1368 Features High voltage High peak collector current High gain band width product High collector dissipation Small package for easy mounting |
| 描述与应用 |
NPN硅外延晶体管 高电压驱动应用 互补型2SA1368 特点 高压 高集电极电流峰值 高增益带宽产品 高集电极耗散 易于安装的小型封装 |