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商品参数:

  • 型号:RN1110MFV
  • 厂家:TOSHIBA
  • 批号:11+rohs 11+rohs
  • 整包数量:8000
  • 最小起批量:100
  • 标记/丝印/代码/打字:XK
  • 封装:SOT-723/VESM
  • 技术文档:下载

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)120
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.15W/150mW
Description & ApplicationsSwitchingInverter Circuit, Interface Circuit and Driver Circuit Applications Ultra-small package, suited to very high density mounting Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more compact equipment and lowering assembly cost. A wide range of resistor values is available for use in various circuits. Complementary to the RN2110MFV to RN2111MFV
描述与应用开关,逆变电路,接口电路, 驱动器电路应用 适合非常高密度安装的超小型封装, 结合到该晶体管的偏置电阻器的数量减少 部件,所以使制造的更加紧凑的设备和 降低了组装成本。 宽范围的电阻值是可用于在各种电路。 互补的RN2110MFV RN2111MFV的
规格书PDF 下载

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深圳市爱瑞凯电子科技有限公司
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RN1110MFV
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