| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -800mA/-0.8A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 460mΩ@ VGS = -1.8V, ID = -100mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.3~-1.0V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Power Management Switch Applications • 1.8V drive • P-ch 2-in-1 • Low ON-resistance:Ron = 460 mΩ (max) (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V) Ron = 234 mΩ (max) (@VGS = −4.0 V) |
| 描述与应用 | 东芝场效应晶体管的硅P沟道MOS类型 高速开关应用 电源管理开关应用 •1.8V驱动 •P沟道2合1 •低导通电阻:Ron = 460 mΩ (max) (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V) Ron = 234 mΩ (max) (@VGS = −4.0 V) |