| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -1.8A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 136mΩ@ VGS = -2.5V, ID = -1A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.3~-1.0V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.5 V drive • Suitable for high-density mounting due to compact package • Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V) : Ron = 204 mΩ (max) (@VGS = -1.8 V) : Ron = 364 mΩ (max) (@VGS = -1.5 V) |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型 ○高速开关应用 ○电源管理开关应用 •1.5 V驱动器 •适用于高密度安装由于紧凑的封装 •低导通电阻：RON= 136MΩ（最大）（@ VGS=-2.5 V） RON= 204MΩ（最大）（@ VGS=-1.8 V） RON= 364MΩ（最大）（@ VGS=-1.5 V） |