| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 1.4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 170mΩ@ VGS = 4V, ID = 700mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4~1.1V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) High Current Switching Applications DC-DC Converter • Suitable for high-density mounting due to compact package • Low on resistance: Ron = 170 mΩ (max) (@VGS = 4.0 V) Ron = 230 mΩ (max) (@VGS = 2.5 V) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS型（U-MOSⅢ） 高电流开关应用 DC-DC转换器 •适用于高密度安装由于紧凑的封装 •低导通电阻RON =170MΩ（最大）（@ VGS=4.0 V） RON =230MΩ（最大）（@ VGS=2.5 V） |