| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | 500mA/0.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 630mΩ@ VGS = 5V, ID = 200mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.35~1.0V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type • High-Speed Switching Applications • 1.5-V drive • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 •高速开关应用 •1.5-V驱动器 •低导通电阻：罗恩= 1.52Ω（最大值）（@ VGS= 1.5 V） RON =1.14Ω（最大）（@ VGS=1.8 V） RON =0.85Ω（最大值）（@ VGS=2.5 V） RON= 0.66Ω（最大）（@ VGS=4.5 V） RON =0.63Ω（最大）（@ VGS=5.0 V） |